Résumé:
A theoretical model has been proposed in this work, studied the electrical activity of the
metallic precipitate/ semiconducting matrix interface. A self-consistente procedure is used in
order to appreciate the evolution of the physical parameters characterising this interface, such
as: The radius of Read sphere“RT, the electrical charge “Q”, the barrier height “Eb”, the
effective recombinaition velocity “Seff” and the cathodolumeniscence contrast “C”, as a
function of the bulk excitation level “A”.The letter being the difference between the minority
and majority quasi Fermi levels, EFN and EFp respectively, the approach used for such
calculation takes into account a flat quasi Fermi level for the majority carrier’s .As for the
quasi Fermi level of the minority carriers “EFN” it is not constant in the space charge region
and in the quasineutral region. The carriers recombination is determined by the thermoionic
law, the results that are obtained led to the knowledge of the variation senses of some physical
parameters.