الخلاصة:
This work is dedicated to the nanometric modeling of a quantum well using the COMSOL software: in a first step we computed the bound states in eigenvalue regime in 1D and 2D; this result is used as a data for a second step which is the resolution of the Poisson-Schrodinger equation system where we have been able to determine the potential energy and the wave function for a bound state and with a position of the electric walls well determined. The MATLAB software was used to determine the Fermi level variation as a function of the surface density ns. we also used a new expression of the ΔEc offset as a function of the effective doping NDeff, which allowed us to model the charge control of the AlGaAs / GaAs heterostructure, thus studying the effect of spontaneous polarization and piezoelectric on the surface density in the channel of a HEMT high mobility transistor, based on AlGaN / GaN heterostructure, the objective was to make a comparative study of two nanometric structures AlGaAs / GaAs and AlGaN / GaN heterojunction
