MODELING OF THE THERMAL CONDUCTIVITY OF OXIDIZED POROUS SILICON AND NON-OXIDE

dc.contributor.author	FAKIRI, SOUHEYLA
dc.contributor.author	RAHMOUN, KHADIDJA
dc.date.accessioned	2022-05-30T10:32:50Z
dc.date.available	2022-05-30T10:32:50Z
dc.date.issued	2013-12-16
dc.identifier.uri	http://depot.umc.edu.dz/handle/123456789/12755
dc.description.abstract	In this work, we have studied and modeled the thermal conductivity of porous silicon oxidized and unoxidized to improve the thermal performance of a porous silicon. We present an analytic solution which enables the prediction of the conductivity using a serialparallel résistense based on the model and Vachon notch. Structure, the comparison between cases and the selection of the best template. The oxidation has been a good solution for the stabilization of the material. The results found are in agreement with those given by experience
dc.language.iso	en
dc.publisher	Université Frères Mentouri - Constantine 1
dc.subject	thermal conductivity
dc.subject	porous silicon oxidized
dc.title	MODELING OF THE THERMAL CONDUCTIVITY OF OXIDIZED POROUS SILICON AND NON-OXIDE
dc.type	Article