Abstract:
In this work, we have studied and modeled the thermal conductivity of porous
silicon oxidized and unoxidized to improve the thermal performance of a porous silicon. We
present an analytic solution which enables the prediction of the conductivity using a serialparallel
résistense based on the model and Vachon notch. Structure, the comparison
between cases and the selection of the best template. The oxidation has been a good
solution for the stabilization of the material. The results found are in agreement with those
given by experience
