Résumé:
the silicides have a great importance in micro-electronics, such as for the manufacture
of the VLSI, HLSI, on the level of the contacts with metal. Among these silicides
there is titanium silicide, which has a very low resistivity with an acceptable stability
thermal and chemical, however titanium is very reactive with the impurities and the
doping agents of the substrate, as this silicide presents an exception by a diagram of
phases with two phases which have two eutectic points very near, with a stable phase
characterized by two completely different structures by their networks and their
physical properties.
Our work consists has the development of a model of calculation of the effective heat
of formation which takes into account the impurities with variable concentrations
between 10 and 20%. On the experimental level, we noticed that silicides evolved
quickly towards the TiSi2 composition and not to TiSi or Ti5Si3, thus we have to
determine the range of temperature of titanium silicide formation, in the case of film
encapsulated, For the doping agents (B,As) established in the substrate we have to
notice their diffusion at the same time as silicon through the layer of silicide to
accumulate towards the MSi/Si interface.