Étude des propriétés statiques et dynamiques du transistor à grille isolée Mosfet

Abstract

This thesis deals the study ofstatic and dynamic properties of the transistor gate isolated MOSFET. After having briefly recalled properties of the semiconductor material « Si », we have presented the structure and operating principle of the MOSFET component, as well as the physical phenomena that govern their performance. For MOSFET transistor we have developed an analytical model of the static properties of the component, taking into account the effect of parasitic elements and physical parameters specific of component. Then we studied the dynamic properties ofhigh frequency MOSFET, and we offered an electrical equivalent circuit diagram small signal and determined the mains dynamic parameters. Finally, we have concluded this work by a presentation and discussion of all the results of the numerical simulation of static and dynamic characteristics of the MOSFET. This study is important given the obtained results, the simplicity of mathematical expressions, and it will be used in the study of computer-aided design “CAD” of logic and analogical circuits based on MOSFET.