Contribution à l’étude du transport quantique et des performances fréquentielles de DGMOS nanométriques

Abstract

The work developed in this thesis correspond to the modeling of MOS transistor double gate DGMOS and its potential for radio frequency applications. Our study extends the characterization / modeling DGMOS optimization Colpitts oscillator type where this component forms the amplifier element. The first part, we are interested in modeling nanometer DGMOS in order to best optimize their electrical performance. DGMOS modeling is performed using a simulation code based on the Newton-Raphson algorithm for solving the Poisson and Schrödinger equations which are discretized by finite difference method. however, the constant decrease in the size of the MOS transistors engenders parasitic phenomena such as: tunnel effect, DIBL effect …, that affect the static and dynamic performance of component. La The solution most commonly used to reduce these effect is to replace the SiO2 layer by an insulating layer high permittivity says'high-k'. In our study, we considered oxides Zirconium and Hafnium represent that the materials with high permittivity most used. Results of the analysis that we conducted using the Highk materials in the transistor DGMOS can significantly reduce the tunneling current. The second part of this thesis is devoted a study on the phase noise a VCO oscillator Coplpitts type integrating considered DGMOS. This study is based on the model of Hajimiri which proposes a technique for noise calculation based on a study of the oscillator phase sensitivity. We therefore developed a method for determining the phase noise in an oscillator LC resonator type Based on the model of Hajimiri. We were able to Montres the variant nature of phase noise in the oscillator. This led us to identify noise sensitive areas and times when the system is most vulnerable to parasitic noise source.