Composants à hétérostructure

Abstract

Since their discovery 1D nano-object are constantly revealing remarkable physical properties. In this regard, carbon nanotubes (CNT) have shown to be a promising candidate as a material for the future nanoelectronic devices, in particular the carbon nanotube field effect transistor (CNTFET). It is in this context that this thesis which presents a modeling of CNTFET that is essential to understand the electrical properties of the transistor proposed in nanoscale. After a descriptive study which gives general seen carbon nanotubes (CNT) and carbon nanotube transistors (CNTFET), we studied the effects of a sub-band using an analytical calcule in the electric characteristics of CNTFET. CNTFET electrical characteristics are obtained by modeling of a model based on onedimensional and two-dimensional resolution in order to determine the charge density, and we deduce the characteristics of the CNTFET. Finally, a simulation is performed based on the model presented in this study, The results of simulation clearly sub-band energy has an effect on the band structure and electrical characteristics obtained CNTFET there is a good agreement with the theoretical results in the literature.