Contribution à l’étude d’une cellule solaire en couches minces à base de CuIn1-xGaxSe2

Abstract

This work focuses on the optimization of the physical and geometrical parameters of solar cell based on the CuIn1-xGaxSe2, the influence of the profile of grading band gap in the absorber as well as the properties of the regions interfaces CdS/CIGS and CIGS/Mo on the output parameters of the cell studied, using the AMPS-1D and SCAPS-1D simulation tool. The optimization results showed the influence of the geometrical and physical parameters as well as the fraction of the gallium (x) in the alloy on the cell performance. The influence of the profile of the band gap grading on the performance of the solar cell, for different profiles is simulated. The results exhibit that the Fermi profile grading band gap in the absorber has more impact on the performance compared to the profile close to the linear. The defects of the SDL layer present at the interface CdS/CIGS and its band gap greatly influence the performance of the cell. A wide band gap of this layer reduces the loss of cell efficiency caused by concentrations of defects. At the interface CIGS/Mo, the results showed that the back surface recombination velocity and the presence of the Electron Back Reflector (EBR) have a great influence on the electrical parameters of the cell when the thickness of the absorber is reduced.