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dc.contributor.authorZADAM, M
dc.contributor.authorJOUAN, P-Y
dc.contributor.authorDJOUADI, M.A
dc.contributor.authorDEBILI, M.Y
dc.date.accessioned2017-06-19T08:51:08Z
dc.date.available2017-06-19T08:51:08Z
dc.date.issued2013-12-16
dc.identifier.urihttp://hdl.handle.net/123456789/135628
dc.description.abstractAnalysis of AlN thin films grown on Si (100) substrates, by DC magnetron sputtering, were made with XRD, SEM for structural and morphology properties. An examination of the evolution of c-axis preferential orientation and residual stress of the elaborated films was made as a function of thickness. Thanks to a structural study by HRTEM a growth scenario correlating film texture, crystallographic orientations with the residual stress is performedfr_FR
dc.language.isoenfr_FR
dc.publisherUniversité des Frères Mentouri Constantinefr_FR
dc.subjectAlNfr_FR
dc.subjectDC Reactive Sputteringfr_FR
dc.subjectHigh Resolution Transmission Electron Microscopyfr_FR
dc.subjectStress Profilefr_FR
dc.subjectX-ray Diffractionfr_FR
dc.titleGROWTH SCENARIO OF ALN THIN FILM ON Si (100)fr_FR
dc.typeArticlefr_FR


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