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dc.contributor.authorMOSTEFAOUI, M
dc.contributor.authorMAZARI, H
dc.contributor.authorMANSOURI, S
dc.contributor.authorBENAMARA, Z
dc.contributor.authorKHELIFI, R
dc.contributor.authorBENSEDDIK, N
dc.contributor.authorAMEUR, K
dc.contributor.authorBENYAHYA, N
dc.contributor.authorBLUET, J.M
dc.contributor.authorCHIKHAOUI, W
dc.date.accessioned2017-06-14T13:34:25Z
dc.date.available2017-06-14T13:34:25Z
dc.date.issued2013-12-16
dc.identifier.urihttp://hdl.handle.net/123456789/135563
dc.description.abstractIn this work we investigate AlGaN/GaN HEMTs structures grown by Low Pressure Metal Organic Chemical Vapour Depostion on SiC substrate. The aim of our work is to study the effect of variation in aluminium (Al) composition (xAl =0.24 and xAl =0.28) over the characteristics I(V) and C(V) of Au/Mo/ AlXGa1-XN/GaN/SiC structures. The current–voltage (I–V) and capacitance–voltage (C–V) of Au/Mo/ AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (1.6 and 1.1.73), barrier height (0.62 eV and 0.50 eV), series resistance (53.30 Ω and 72.72 Ω ) were evaluated from I–V data for the structures with xAl =0.24 and xAl =0.28 .The doping concentration (1.5×1018 cm-3and 1.2×1018 cm-3) and the 2DEG sheet carrier density n2D (1.16×1013 cm-2 and 1×1013 cm-2) were evaluated from C–V data for the two structures Au/Mo/ Al0.24Ga0.76N/GaN/SiC and Au/Mo/ Al0.28Ga0.72N/GaN/SiCfr_FR
dc.language.isoenfr_FR
dc.publisherUniversité des Frères Mentouri Constantinefr_FR
dc.subjectAlGaN/GaNfr_FR
dc.subjectHEMTsfr_FR
dc.subjectSchottky contactfr_FR
dc.subjectLPMOCVDfr_FR
dc.titleA COMPARATIVE STUDY OF I–V AND C–V CHARACTERISTICS OF SCHOTTKY GATE AlGaN/GaN HEMTsfr_FR
dc.typeArticlefr_FR


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