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dc.contributor.authorOUADJAOUT, D
dc.contributor.authorHAMADAS, I
dc.date.accessioned2017-06-13T13:29:45Z
dc.date.available2017-06-13T13:29:45Z
dc.date.issued2013-12-16
dc.identifier.urihttp://hdl.handle.net/123456789/135534
dc.description.abstractDirectional solidification is one of the most popular techniques for massive production of multi-crystalline silicon (mc-Si). A numerical model is developed to simulate the silicon ingot directional solidification process. Temperature distribution and solidification interface location are presentedfr_FR
dc.language.isoenfr_FR
dc.publisherUniversité des Frères Mentouri Constantinefr_FR
dc.subjectCrystal Growthfr_FR
dc.subjectSiliconfr_FR
dc.subjectBridgmanfr_FR
dc.subjectCOMSOLfr_FR
dc.subjectheat transferfr_FR
dc.subjectMeltfr_FR
dc.titleMODELING OF SILICON SOLIDIFICATION USING A MODIFIED BRIDGMAN TECHNIQUEfr_FR
dc.typeArticlefr_FR


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