Study of radiation damage induced in Si(111) targets by Antimony ions implantation

dc.contributor.author	Serrar, H.
dc.contributor.author	Labbani, R.
dc.contributor.author	Benazzouz, C.
dc.date.accessioned	2022-12-17T17:50:39Z
dc.date.available	2022-12-17T17:50:39Z
dc.date.issued	2016-12-15
dc.identifier.uri	http://depot.umc.edu.dz/handle/123456789/13538
dc.description.abstract	In this work, we studied the radiation damage induced by the implantation of Sb+ ions into Si(111) targets at 120KeV energy to a dose of 1E15Sb+/cm2 and 1.6E15Sb+/cm2. The restoration of defects by the annealing treatments (900°C, 30min) was also investigated. The analysis of samples was performed by Rutherford Backscattering Spectrometry (RBS) using 2MeV He+ beam using channeling mode. The obtained spectra were analysed by the RBX code in order to extract the desired information: ion implantation parameters, thickness of the damaged layer and defects profiles. Before annealing treating, the radiation damage increased with the use of antimony dose. By annealing treatment, a satisfactory restoration of damage was obtained approaching the state of virgin samples	fr_FR
dc.language.iso	en	fr_FR
dc.publisher	Université Frères Mentouri - Constantine 1	fr_FR
dc.subject	antimony	fr_FR
dc.subject	silicon	fr_FR
dc.subject	ion implantation	fr_FR
dc.title	Study of radiation damage induced in Si(111) targets by Antimony ions implantation	fr_FR
dc.type	Article	fr_FR