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Modified Becke-Johnson potential investigation of InAsxSb1-x semiconductors
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| dc.contributor.author | Bentayeb, A. | |
| dc.contributor.author | Saadaoui, F. | |
| dc.contributor.author | Marbouh, N. | |
| dc.contributor.author | Bouhafs, K. | |
| dc.contributor.author | Driss-Khodja, F. | |
| dc.contributor.author | Arbouche, O. | |
| dc.date.accessioned | 2022-12-14T19:17:33Z | |
| dc.date.available | 2022-12-14T19:17:33Z | |
| dc.date.issued | 2016-12-15 | |
| dc.identifier.uri | http://depot.umc.edu.dz/handle/123456789/13450 | |
| dc.description.abstract | In this paper we have investigated structural, electronic, and thermodynamic properties of ternary InAsxSb1-x semiconductors within the full potential-linearized augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). We used the quasi-harmonic Debye model when calculating thermodynamic properties. We treated the exchange-correlation effects with the Tran-Blaha modified Becke-Johnson + local density approximation (TB-mBJLDA) potential. The obtained results are reported, discussed, and compared with previous data | fr_FR |
| dc.language.iso | en | fr_FR |
| dc.publisher | Université Frères Mentouri - Constantine 1 | fr_FR |
| dc.subject | Semiconductors | fr_FR |
| dc.subject | FP-LAPW | fr_FR |
| dc.subject | mBJ-LDA | fr_FR |
| dc.subject | structural properties | fr_FR |
| dc.subject | ; thermodynamic parameters | fr_FR |
| dc.subject | electronic structure | fr_FR |
| dc.title | Modified Becke-Johnson potential investigation of InAsxSb1-x semiconductors | fr_FR |
| dc.type | Article | fr_FR |
