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dc.contributor.authorKalla, L
dc.contributor.authorBoudine, A
dc.contributor.authorBenhizia, K
dc.contributor.authorZaabat, M
dc.date.accessioned2017-04-26T10:45:55Z
dc.date.available2017-04-26T10:45:55Z
dc.date.issued2013-02-17
dc.identifier.urihttp://hdl.handle.net/123456789/132725
dc.description.abstractIn this work, we focus on the transport of spin-polarized currents in semiconductor materials and the quantum modeling of this transport taking into account different mechanisms acting on the spin. More specifically, we describe how are introduced in the equations relaxation mechanisms due to the spin-orbit coupling and interactions with spin flip. We study theoretically the spin polarized transport in the case of a 1D channel of a transistor with spin rotation called (spin FET). We determined the relationship of the transmission function of the longitudinal wave vector of the electron. And we also established the variation of the drain current in a transistor channel 1D spin- FET in the case of a ballistic or non-ballistic projectilefr_FR
dc.language.isoenfr_FR
dc.publisherUniversité des Frères Mentouri Constantinefr_FR
dc.subjectSpin polarized transportfr_FR
dc.subjectspintronicfr_FR
dc.subjectspinfetfr_FR
dc.subjectSemiconductorfr_FR
dc.titleSPIN POLARIZED TRANSPORT IN 1D SPIN-FETfr_FR
dc.typeArticlefr_FR


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