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INFLUENCE OF PHYSICAL PARAMETERS ON THE TRANSCONDUCTANCE OF CHANNEL FOR THE COMPONENT SUBMICRON
(Université des Frères Mentouri Constantine, 2013-02-17)
The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...
SPIN POLARIZED TRANSPORT IN 1D SPIN-FET
(Université des Frères Mentouri Constantine, 2013-02-17)
In this work, we focus on the transport of spin-polarized currents in semiconductor materials and
the quantum modeling of this transport taking into account different mechanisms acting on the spin.
More specifically, we ...
PHYSICAL MODELING OF HIGHLY DENSE PERIODIC ARRAY OF CARBON NANOTUBES
(Université des Frères Mentouri Constantine, 2013-02-17)
In 1991, Iijima discovered, carbon nanotubes (CNTs) that have since been an intensive research [1].
Given their exceptional intrinsic properties, they become very interesting in many fields of science
and technology. ...
THE DRAIN TRANSCONDUCTANCE gm OF MESFET GAAS
(Université des Frères Mentouri Constantine, 2013-02-17)
The component elements of the field effect transistors can be grouped into two distinct categories.
Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb
Among the intrinsic ...
NEW MODEL FOR SPINFET TRANSISTOR
(Université des Frères Mentouri Constantine, 2013-02-17)
In this work we present the study of spin polarized transport in semiconductors as new type of current transmission in semiconductor devices, we built a 2deg model for so- called SPINFET transistor.
We chose the spinFET ...