The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...

In this work, we focus on the transport of spin-polarized currents in semiconductor materials and the quantum modeling of this transport taking into account different mechanisms acting on the spin. More specifically, we ...

In 1991, Iijima discovered, carbon nanotubes (CNTs) that have since been an intensive research [1]. Given their exceptional intrinsic properties, they become very interesting in many fields of science and technology. ...

The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb Among the intrinsic ...

In this work we present the study of spin polarized transport in semiconductors as new type of current transmission in semiconductor devices, we built a 2deg model for so- called SPINFET transistor. We chose the spinFET ...