• English
    • français
    • العربية
  • English 
    • English
    • français
    • العربية
  • Login
Search 
  •   Archives Home
  • Conférences, Colloques, Séminaires, Symposiums
  • Physique
  • Search
  •   Archives Home
  • Conférences, Colloques, Séminaires, Symposiums
  • Physique
  • Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Search

Show Advanced FiltersHide Advanced Filters

Filters

Use filters to refine the search results.

Now showing items 1-2 of 2

  • Sort Options:
  • Relevance
  • Title Asc
  • Title Desc
  • Issue Date Asc
  • Issue Date Desc
  • Results Per Page:
  • 5
  • 10
  • 20
  • 40
  • 60
  • 80
  • 100
Thumbnail

INFLUENCE OF PHYSICAL PARAMETERS ON THE TRANSCONDUCTANCE OF CHANNEL FOR THE COMPONENT SUBMICRON 

Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...
Thumbnail

THE DRAIN TRANSCONDUCTANCE gm OF MESFET GAAS 

Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb Among the intrinsic ...

DSpace software copyright © 2002-2015  DuraSpace
Contact Us | Send Feedback
Theme by 
@mire NV
 

 

Browse

All of ArchivesCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CommunityBy Issue DateAuthorsTitlesSubjects

My Account

LoginRegister

Discover

AuthorBoudine, A (2)
Draidi, M (2)
Zaabat, M (2)
Subjectgate length (2)
parasitic resistances (2)
GaAs (1)MESFET (1)MESFET GaAs (1)Transconductance (1)... View MoreDate Issued2013 (2)

DSpace software copyright © 2002-2015  DuraSpace
Contact Us | Send Feedback
Theme by 
@mire NV