Now showing items 1-4 of 4

    • Ni INSERTION EFFECT ON THE ELECTRONIC PROPERTIES OF ZnS: DFT STUDY 

      CHAFI, Z; MESBAHI, M (Université des Frères Mentouri Constantine, 2013-12-16)
      The present study examines the atomic insertion of Ni on ZnS bulk and focuses on the ZnS and Ni-ZnS electronic properties. For this purpose we used the Wien2k code based on the theory of density functional theory (DFT). ...
    • PREPARATION OF ZINC SULFIDE THIN FILM BY CHEMICAL BATH DEPOSITION 

      LEKIKET, H; AIDAAND, M.S (Université des Frères Mentouri Constantine, 2013-12-16)
      ZnS thin films have been deposited on glass slide substrates by the chemical bath deposition method at 80 °C for 60 min. The solutions in the reaction bath were prepared from ZnSO4 7H2O, SC(NH2)2, NH3 and N2H4. The ...
    • PRESSURE EFFECT ON THE DIELECTRIC PROPERTIES OF THE ZINC-BLENDE ZnSxSe1-x 

      KHEDIRI, F; BECHIRI, A; BENMAKHLOUF, F (Université des Frères Mentouri Constantine, 2013-12-16)
      Dielectric properties of the semiconductor alloy ZnSxSe1-x and its binary compounds ZnS, ZnSe under the normal and hydrostatic pressure are calculated by the empirical pseudopotential method (E.P.M) associated with the ...
    • STRUCTURAL PROPERTIES OF ALUMINUM-DOPED ZINC SULFIDE GROWN BY CHEMICAL BATH DEPOSITION FROM AN ACIDIC MEDIUM 

      BELACHE, B; KHELFAOUI, Y (Université des Frères Mentouri Constantine, 2013-12-16)
      We report X-ray diffraction (XRD) and Fourier Transform Infrared spectroscopy (FTIR) measurements on Aluminum-doped zinc sulfide (ZnS) precipitated powders by chemical bath deposition (CBD) from an acidic medium. The ...