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dc.contributor.author |
SMAALI, A |
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dc.contributor.author |
ABDELLI-MESSACI, S |
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dc.contributor.author |
LAFANE, S |
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dc.contributor.author |
KHEREDDINE, Y |
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dc.contributor.author |
KERDJA, T |
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dc.contributor.author |
KECHOUANE, M |
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dc.contributor.author |
NEMRAOUI, O |
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dc.date.accessioned |
2022-05-31T12:37:57Z |
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dc.date.available |
2022-05-31T12:37:57Z |
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dc.date.issued |
2013-12-16 |
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dc.identifier.uri |
http://depot.umc.edu.dz/handle/123456789/12836 |
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dc.description.abstract |
In this work ZnO and ZnO doped vanadium (1 - 6 %) thin films were deposited on
glass substrate by the pulsed laser deposition technique. The films were deposited at 500°C
under oxygen ambient pressure of 10-2 mbar with a laser fluence of 2 J/cm2. The study of
structural properties of the films as a function of the vanadium concentration was
investigated using XRD analysis. The patterns shows that all simples doped and undoped are
completely c-axis oriented with a high crystalline quality. Influence of doping concentration
in calculated grain size values was discussed |
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dc.language.iso |
en |
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dc.publisher |
Université Frères Mentouri - Constantine 1 |
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dc.subject |
Vanadium-doped ZnO |
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dc.subject |
Pulsed Laser Deposition |
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dc.subject |
X-ray Diffraction |
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dc.title |
HIGHLY TEXTURED ZnO AND ZnO:V THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION |
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dc.type |
Article |
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