MODELING OF SILICON SOLIDIFICATION USING A MODIFIED BRIDGMAN TECHNIQUE

dc.contributor.author	OUADJAOUT, D
dc.contributor.author	HAMADAS, I
dc.date.accessioned	2022-05-31T12:37:50Z
dc.date.available	2022-05-31T12:37:50Z
dc.date.issued	2013-12-16
dc.identifier.uri	http://depot.umc.edu.dz/handle/123456789/12832
dc.description.abstract	Directional solidification is one of the most popular techniques for massive production of multi-crystalline silicon (mc-Si). A numerical model is developed to simulate the silicon ingot directional solidification process. Temperature distribution and solidification interface location are presented
dc.language.iso	en
dc.publisher	Université Frères Mentouri - Constantine 1
dc.subject	Crystal Growth
dc.subject	Silicon
dc.subject	Bridgman
dc.subject	COMSOL
dc.subject	heat transfer
dc.subject	Melt
dc.title	MODELING OF SILICON SOLIDIFICATION USING A MODIFIED BRIDGMAN TECHNIQUE
dc.type	Article