Abstract:
Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiNx:H,
simply called SiNx) has been widely used in photovoltaic silicon solar cells as dielectric,
because of low deposited temperature and compatibility with other process. SiNx gradually
becomes the first choice in industry silicon solar cells production. Nowadays, in photovoltaic
silicon solar cells, the excellent antireflection and passivation quality of PECVD SiNx have
obvious effect on efficiency of solar cells. In this paper, we analysis several critical
parameters for PECVD SiNx deposition, such as temperature of substrate, plasma power,
ratio of NH3/SiH4 and deposition time, and to investigate optical properties such as weighted
reflectance (Rw), ellipsometry measurement for SiNx thin film refractive indices and
thickness, then we investigate the correlation between the ratio R=[NH3/SiH4] and plasma
power with refractive indices and deposition rate. At last, we propose a set of optimized
parameters for PECVD-SiNx deposition in silicon solar cells application
