THE DRAIN TRANSCONDUCTANCE gm OF MESFET GAAS

Abstract

The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb Among the intrinsic elements, the transconductance gm is cited, which reflects by its nature the localized behavior of the physical structure of the transistors. The transconductance gm represents the control mechanism of the transistor; it is the variation of the drain current Ids depending on the gate voltage for a constant drain voltage. In this work we studied: - Transconductance variation gm according to the gate length L and voltage Vds - Transconductance variation gm according to the resistance Rs and voltage Vds