SIMULATION OF TUNNEL JUNCTION IN CASCADE SOLAR CELL (GAAS/GE) USING AMPS-1D D.

dc.contributor.author	Benmoussa, D
dc.contributor.author	Ben Slimane, H
dc.contributor.author	Helmauoi, A
dc.date.accessioned	2022-05-30T10:18:59Z
dc.date.available	2022-05-30T10:18:59Z
dc.date.issued	2013-02-17
dc.identifier.uri	http://depot.umc.edu.dz/handle/123456789/12593
dc.description.abstract	The development of the tunnel junction interconnect was key to the development of the first two-terminal monolithic, multi-junction solar cell. In this paper describes a simulation for the tunnel junction (AlGaAs) between top cell( GaAs) and bottom cell (Ge ).this cascade solar cell was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 5 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE)
dc.language.iso	en
dc.publisher	Université Frères Mentouri - Constantine 1
dc.subject	AlGaAs
dc.subject	AMPS-1D simulation
dc.subject	conversion
dc.subject	efficiency
dc.subject	quantum efficiency
dc.title	SIMULATION OF TUNNEL JUNCTION IN CASCADE SOLAR CELL (GAAS/GE) USING AMPS-1D D.
dc.type	Article