Résumé:
The solar cells used in orbit are exposed to radiation environment consists mainly of electrons, protons and neutron.
These particles degrade the electrical performance of cells and varying characteristics (current-voltage, form factor,
performance ... etc...) phenomenon created by the recombination of defects. The main purpose of this work is to
characterize the effects of defects induced by electron irradiation on the IV characteristic of the solar cell and external
to its parameters by numerical simulation of a pn solar cell based on GaAs
