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Browsing Actes by Subject "gate length"

Browsing Actes by Subject "gate length"

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  • Draidi, M; Zaabat, M; Boudine, A (Université Frères Mentouri - Constantine 1, 2013-02-17)
    The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...
  • Draidi, M; Zaabat, M; Boudine, A (Université Frères Mentouri - Constantine 1, 2013-02-17)
    The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb Among the intrinsic ...

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