Abstract:
Inserting Multi-quantum well into solar cells proved to be a promising technique for producing high efficiency
third generation solar cells. The presence of quantum well increases the absorption spectra into longer
wavelengths, therefore increasing the short-circuit current density while maintaining the open-circuit voltage at
acceptable level [2;3]. In this work;we evaluate the generated photocurrent in an AlxGa1-xAs/GaAs p-i-n solar
cell using a simple approach. Firstly Schrödinger equation is solved numerically to determine the confined
energy states in a single quantum well; the second step consists of calculating the absorption coefficient α ( λ )
taking into account the allowed valence to conduction bands transitions. Finally the total photocurrent is
analysed for various structure parameters specifically; width, height (related to the Aluminum concentration x ),
and number of wells inside the intrinsic layer. The simulated results confirm the enhancement brought about by
the presence of quantum wells
