Now showing items 1-2 of 2

    • INFLUENCE OF PHYSICAL PARAMETERS ON THE TRANSCONDUCTANCE OF CHANNEL FOR THE COMPONENT SUBMICRON 

      Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
      The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...
    • THE DRAIN TRANSCONDUCTANCE gm OF MESFET GAAS 

      Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
      The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb Among the intrinsic ...