Now showing items 1-6 of 6

    • INFLUENCE OF PHYSICAL PARAMETERS ON THE TRANSCONDUCTANCE OF CHANNEL FOR THE COMPONENT SUBMICRON 

      Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
      The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...
    • NEW MODEL FOR SPINFET TRANSISTOR 

      Boudine, A; Kalla, L; Benhizia, K; Zaabat, M; draidi, M; Zerrouk, I (Université des Frères Mentouri Constantine, 2013-02-17)
      In this work we present the study of spin polarized transport in semiconductors as new type of current transmission in semiconductor devices, we built a 2deg model for so- called SPINFET transistor. We chose the spinFET ...
    • PHYSICAL MODELING OF HIGHLY DENSE PERIODIC ARRAY OF CARBON NANOTUBES 

      Dridi, C; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
      In 1991, Iijima discovered, carbon nanotubes (CNTs) that have since been an intensive research [1]. Given their exceptional intrinsic properties, they become very interesting in many fields of science and technology. ...
    • Porous Surface Processes of Cu/SnO2 films in the detection of CH3OH-liquid, Prepared by Dip-Coating Method 

      Benzitouni, S; Zaabat, M; Ebothe, J; Khial, A; Rechem, D; Cheriet, H; Bouras, D (Université des Frères Mentouri Constantine, 2016-12-15)
      In recent years, the detection methods of toxic chemical species and measurement of their concentration increased significantly. In the field of detection of chemical species, we must distinguish chemical sensors that play ...
    • SPIN POLARIZED TRANSPORT IN 1D SPIN-FET 

      Kalla, L; Boudine, A; Benhizia, K; Zaabat, M (Université des Frères Mentouri Constantine, 2013-02-17)
      In this work, we focus on the transport of spin-polarized currents in semiconductor materials and the quantum modeling of this transport taking into account different mechanisms acting on the spin. More specifically, we ...
    • THE DRAIN TRANSCONDUCTANCE gm OF MESFET GAAS 

      Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
      The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rb Among the intrinsic ...