Now showing items 1-2 of 2

    • EFFECT OF TEMPERATURE ON (IV) SATATICS CHARACTERISTICS OF GAAS MESFET 

      FARES, Z; ALIAOUAT, W; SAIDI, Y; ZAABAT, M; AZIZI, C (Université des Frères Mentouri Constantine, 2013-12-16)
      The GaAs MESFETs are the most active components used in micro-onde.to better exploit the performance of these components circuits, it is necessary to develop techniques for sophisticated numerical computation based on ...
    • INFLUENCE OF PHYSICAL PARAMETERS ON THE TRANSCONDUCTANCE OF CHANNEL FOR THE COMPONENT SUBMICRON 

      Draidi, M; Zaabat, M; Boudine, A (Université des Frères Mentouri Constantine, 2013-02-17)
      The component elements of the field effect transistors can be grouped into two distinct categories. Extrinsic elements representing different access structures such as parasitic resistances Rs and Rd . Among the intrinsic ...