استعرض حسب المؤلف "Gabouze, N"

فرز حسب: رتب: النتائج:

  • SILICON NANOSTRUCTURES FORMATION BY V2O5 AND HF STAIN ETCHING 
    Ayat, M; Gabouze, N; Boarino, L; Guedouar, B (Université Frères Mentouri - Constantine 1, 2013-02-17)
    In recent years, much effort has been devoted to the manufacture of one dimensional nanostrutured materials for application in micro and nanodevices. Silicon is the basic material in microelectronics, and in recent years, ...
  • Silicon Nanostructures Formation by V2O5 and HF Stain Etching 
    Ayat, M; Gabouze, N; Boarino, L; Guedouar, B (Université Frères Mentouri - Constantine 1, 2013-02-17)
    In this work we report the fabrication of silicon pillar array by a simple chemical etching of silicon in vanadium oxide/fluorhydric acid solution. Different etching parameters including the solution concentration, temperature ...
  • Silicon Nanostructures Formation by V2O5 and HF Stain Etching 
    Ayat, M; Gabouze, N; Boarino, L; Guedouar, B (Université Frères Mentouri - Constantine 1, 2013-02-17)
    In this work we report the fabrication of silicon pillar array by a simple chemical etching of silicon in vanadium oxide/fluorhydric acid solution. Different etching parameters including the solution concentration, temperature ...
  • Texture Etching of Monocristalline Silicon in Sodium Hypochlorite Solution 
    Lounas, A; Nait Bouda, A; Menari, H; Gabouze, N (Université Frères Mentouri - Constantine 1, 2013-02-17)
    Alkaline etching has been widely used in silicon technology and applied for different purposes such as damaged layer removal from silicon surfaces, micro-membrane and complex micro-device fabrication for micro-sensor [1] ...

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